SEMICONDUCTOR MEMORY DEVICE CAPABLE OF PERFORMING REFRESH OPERATION WITHOUT AUTO REFRESH COMMAND AND MEMORY SYSTEM INCLUDING THE SAME

摘要

A semiconductor memory device capable of performing a refresh operation without an auto refresh command and a memory system including the same are disclosed. The semiconductor memory device comprises an inner address generation circuit, an inner command generation circuit, and a memory cell array. A first memory bank group and the other memory bank(s) can perform the refresh operation when a read or a write command is inputted or when a portion of the memory bank(s) of the first memory bank group performs a read or a write operation. Therefore, for the semiconductor memory device, addressing is simple, all data bandwidth can be used, and latency does not change.