首页> 外国专利> INDUCTIVELY COUPLED PLASMA SOURCE AND INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS USING SAME

INDUCTIVELY COUPLED PLASMA SOURCE AND INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS USING SAME

机译:使用相同的电感耦合等离子体源和电感耦合等离子体处理装置

摘要

Disclosed are an inductively coupled plasma source capable of generating uniform impedance on antennas, and an inductively coupled plasma processing apparatus using the same. The inductively coupled plasma source according to the present invention comprises a plurality of antennas; a plurality of transfer lines of the same length, which are connected to the respective antennas on one end thereof such that high frequency voltages are separately delivered to the antennas; and a transfer plate, to which the high frequency voltage is applied and the other end of each of the transfer lines is connected, and which delivers the high frequency voltage to the transfer lines such that uniform impedance is formed on the antennas.;COPYRIGHT KIPO 2014
机译:公开了一种能够在天线上产生均匀阻抗的感应耦合等离子体源以及使用该感应耦合等离子体源的感应耦合等离子体处理设备。根据本发明的感应耦合等离子体源包括多个天线。多个相同长度的传输线,它们的一端连接到相应的天线,从而将高频电压分别传送到天线;传输板,其上施加有高频电压,并且每条传输线的另一端连接到该传输板,并且将高频电压传输到传输线,从而在天线上形成均匀的阻抗。 2014年

著录项

  • 公开/公告号KR20140087243A

    专利类型

  • 公开/公告日2014-07-09

    原文格式PDF

  • 申请/专利权人 LIGADP CO. LTD.;

    申请/专利号KR20120156686

  • 发明设计人 HWANG DANIELKR;LEE KYUNG SEOKKR;

    申请日2012-12-28

  • 分类号H05H1/46;H03H7/40;

  • 国家 KR

  • 入库时间 2022-08-21 15:42:32

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