LAMINATED STRUCTURE FERROELECTRIC GATE THIN FILM TRANSISTOR AND FERROELECTRIC THIN FILM CAPACITOR

摘要

the present invention of the ferroelectric gate thin film transistor 20 includes a channel layer 28 and the , channel layer 28, conductive gate electrode that controls the state (22), a channel layer 28 and the gate electrode layer 22, a gate insulating layer (25) comprises a ferroelectric layer disposed between the ferroelectric gate having and thin film transistors, gate insulating layer (ferroelectric layer) 25 is, PZT layer 23 and, BLT layer (24) (Pb diffusion barrier layer) having a stacked structure, a channel layer (oxide conductor layer) 28 there is disposed on the surface layer of BLT (Pb diffusion preventing layer) 24 side of the gate insulating layer (ferroelectric layer) 25, a. According to the ferroelectric gate thin film transistor 20 of the present invention, tends to transfer characteristics of the ferroelectric gate thin film transistor is degraded (for example, tends to narrow the width of the memory window), including the problem that, in the PZT layer of an oxide conductor layer Pb can solve the various problems that sometimes occur due to diffusion of atoms. ;