JUNCTION SENSOR ARRAY USING METAL OXIDE SEMICONDUCTOR AND MANUFACTURING METHOD FOR JUNCTION SENSOR ARRAY

摘要

Disclosed in the present invention is a junction sensor array using a metal oxide semiconductor, which comprises: a semiconductor substrate (10); and a junction sensor element (100) including a first semiconductor seed layer (20) and a second semiconductor seed layer (30) which are deposited on the semiconductor substrate (10) at regular intervals, a first nanostructure (21) and a second nanostructure (31) which grow from the first semiconductor seed layer (20) and the second semiconductor seed layer (30) respectively, and a catalyst layer (50) which is deposited on the surface of the first nanostructure (21) and the second nanostructure (31).;COPYRIGHT KIPO 2015