NITROGEN CONTAINING HETEROAROMATIC LIGAND/TRANSITION METALCOMPLEXES, BUFFER LAYER COMPRISING THE COMPLEXES AND ORGANIC THIN FILM TRANSISTOR COMPRISING THE BUFFER LAYER

摘要

The present invention comprises a buffer layer and the hetero- aromatic -based ligand / transition metal complex , which comprises a nitrogen relates to an electronic device comprising a buffer layer , provided the hetero- aromatic -based ligand / transition metal complex containing nitrogen as a new complex , and the charge injection (carrier injection) and a charge transfer from the electronic device to form a buffer layer containing the same ( transport) to enhance and improve the efficiency of the electronic device . ; hetero aromatic system containing a nitrogen ligand / transition metal complex , a buffer layer