Fabrication method of Zn and Ti-doped BiFeO3 Thin Film

摘要

The present invention relates to a method of manufacturing a BiFeO ₃ thin zinc and titanium added relates to , and more particularly, BiFeO ₃ of the Bi ion in excess of the a-site and B-site addition of a small amount of Zn, Ti through the substitution of the ions increases the chemical stability overall ferroelectric wholly it is possible to improve the characteristics , Zn, Ti ions substituted in the B-site to reduce the generation of an oxygen vacancy is generated inside the thin film and to improve the properties of the ferroelectric , and the leakage current , Zn, and addition of Ti ions a little more improvement Sikkim problem of BFO thin film with a low residual polarization value and high electric conductivity by changing the deposition conditions has an effect that can be presented as well as the development potential . ;