Fabrication of phosphor free red and white nitride- based LEDs

摘要

multiple quantum well light-emitting diode (MQW) structure and the light emitting diode for a multiple quantum well (MQW) structure prepared method are provided. The MQW structure comprises a plurality of quantum well structure , each of the quantum well structure is a barrier layer ; And the barrier is formed and comprises a well layer having the quantum dot nanostructures embedded therein, the barrier layer and the well layer comprises a first metal nitride -based material; Wherein the at least one quantum well structure further comprises a capping layer formed on the well layer , the capping layer is a capping layer capping the first metal - second as compared with the nitride -based material having a different metal component metal - nitro comprises a fluoride -based material . ;