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METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF NITRIDE BY EPITAXIAL GROWTH ON A SUBSTRATE PREVENTING GROWTH ON THE EDGES OF THE SUBSTRATE
METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF NITRIDE BY EPITAXIAL GROWTH ON A SUBSTRATE PREVENTING GROWTH ON THE EDGES OF THE SUBSTRATE
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机译:通过在基质边缘上的表皮生长来制造氮化物的单个晶体的方法,以防止基质边缘上的生长
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摘要
A method for manufacturing a single crystal of nitride by epitaxial growth on a substrate appropriate for the growth of the crystal. The substrate includes, deposited on the edges of its growth surface, a mask appropriate to prevent growing of the single crystal on the edges of the substrate.
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