METHODS FOR FORMING NONVOLATILE MEMORY ELEMENTS WITH RESISTIVE-SWITCHING METAL OXIDES

摘要

The non-volatile memory device is provided with a resistive switching metal oxides. Non-volatile memory device is a silicon-containing material on the metal-containing material may be formed by depositing a. The metal-containing material may be oxidized to form a resistive switching metal oxide. The silicon-containing material is silicon in the metal when the heat is - reacted with a metal containing material within. This forms a metal silicide on the lower electrode in a non-volatile memory element. The upper electrode may be deposited on top of the metal oxide. The silicon-containing layer in the silicon metal. Since the reaction with a part of the metal contained in the layer, the resistive switching metal oxide that is formed is a metal defects when compared to the stoichiometric metal oxide formed from the same metal