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Resist Underlayer Film Forming Compositions For Lithography, Containing Aromatic Fused Ring-Containing Resin
Resist Underlayer Film Forming Compositions For Lithography, Containing Aromatic Fused Ring-Containing Resin
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机译:光刻胶用抗蚀剂下层成膜组合物,包含芳族稠环树脂
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摘要
There is provided a resist underlayer film forming composition for lithography, which in order to prevent a resist pattern from collapsing after development in accordance with the miniaturization of the resist pattern, is applied to multilayer film process by a thin film resist, has a lower dry etching rate than resists and semiconductor substrates, and has a satisfactory etching resistance relative to a substrate to be processed in the processing of the substrate. A resist underlayer film forming composition used in lithography process by a multiplayer film, comprises a polymer containing a unit structure having an aromatic fused ring, a unit structure having a protected carboxyl group or a unit structure having an oxy ring. A method of forming a pattern by use of the resist underlayer film forming composition. A method of manufacturing a semiconductor device by utilizing the method of forming a pattern.
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