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Plasma processing apparatus for film deposition and deposition method of micro crystalline silicon layer using the same
Plasma processing apparatus for film deposition and deposition method of micro crystalline silicon layer using the same
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机译:用于膜沉积的等离子体处理设备以及使用该等离子体处理设备的微晶硅层的沉积方法
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摘要
A plasma processing apparatus for film deposition is provided to generate high density plasma by an inductive coupling electric field formed between a main electrode and a sub electrode in a horizontal direction so as to improve a film deposition rate. A plasma processing apparatus(100) for film deposition comprises the following units. A chamber(110) has a reaction space. A substrate pallet(120) is installed inside the chamber. A gas spraying unit is installed in an upper part of the substrate pallet. A gas ring equipped with a plurality of spraying holes(172) is installed near the substrate pallet.
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