Tera- AND SOLID GHz Miniature Spectrometer

摘要

1. Spectrometric device, comprising:;a solid structure adapted to receive the incident electromagnetic radiation, said incident electromagnetic radiation has a spectrum; wherein said structure has an adjustable charge carrier layer, characterized by a plurality of parameters;;at least one plasmon resonator in said regulated charge carrier layer;;at least one defect in said regulated charge carrier layer;;at least first and second contacts to said adjustable charge carrier layer, wherein said contacts are provided on said adjustable charge carrier layer and spaced apart;;a measuring device for measuring the response of said solid structure to said incident electromagnetic radiation, wherein said response is measured between said first and second contacts, and wherein said response provides information about said spectrum of said incident electromagnetic radiation; and;controlled control device for controlling at least one of said plurality of parameters.;2. A method for measuring the electromagnetic spectrum, said method comprising the steps of:;providing a solid structure, wherein said structure has a solid-state carrier adjustment layer, said carrier layer having at least one defect and at least one plasmon resonator, wherein said carrier layer characterized by a plurality of parameters;;receive incident electromagnetic radiation, characterized by a first frequency spectrum and energy;;direct said electromagnetic radiation incident on said solid state structure;;convert said energy of said incident electromagnetic radiation energy in the at least one plasma waves, wherein said plasma is characterized by a wave of electromagnetic field and said flame wave oscillates at a second frequency and is distributed in at least one of said plasmonic resonators;;generating a signal using a non-linear response to at least one of said defects with respect of said plasmon electromagnetic field;;adjust at least one of said adjustable parameters of said carrier layer;;receive a plurality of said measurement signals for different values ​​of at least one of said parameters;;determining a relationship between at least one of said parameters and said signal value; and;determining said first frequency range of said incident electromagnetic radiation on the basis of said relationship.;3. The apparatus of claim 1, wherein said response is a photovoltage.;4. The apparatus of claim 1, wherein said response is a photocurrent.;5. The apparatus of claim 1, wherein said response is photocapacitance.;6. The apparatus of claim 1, wherein said response is fotoinduktivnost.;7. The apparatus of claim 1, wherein said response is a photoresistor.;8. The apparatus of claim 1, wherein said adjustable parameter is the density of carriers from said carrier layer.;9. The apparatus of claim 1, wherein said adjustable parameter is a dielectric layer surrounding said carrier.;10. The apparatus of claim 1, wherein said adjustment parameter is the intensity of the magnetic field from an independent source and the field penetrates into the layer of charge carriers.;11. The apparatus of claim 1, wherein said adjustment parameter is the effective mass of the carriers from said carrier layer.;12. The apparatus of claim 1, wherein said adjustable parameter is the size of the plasmon resonator.;13. The apparatus of claim 1, wherein said at least one defect is implemented as one of a portion etched, density nonuniformity carrier, narrowing or widening, a metal layer (e.g., deposited on the structure), impurity doping, carrier mobility defect charge, the defect of the dielectric environment, the structural defect.;14. The apparatus of claim 1, wherein the plurality of periodically arranged in a space of controlled plasmonic resonators introduced into said carrier layer.;15. The apparatus of claim 1, wherein the plurality of periodically disposed in the space controlled plasmonic resonators introduced into said carrier layer.;16. The apparatus of claim 1, wherein the plurality of contacts to said additional carrier layer is provided in addition to said first and second contacts.;17. The apparatus of claim 1 wherein more than one spectrometer is implemented in a single solid structure.;18. The apparatus of claim 1, wherein said solid-state structure comprises GaAs / AlGaAs heterostructure, where Ga is gallium, As is arsenic and Al is aluminum.;19. The apparatus of claim 1, wherein said solid-state structure is one of: a silicon MOSFET structure, InAs structure or Si / Ge structure where Si is silicon, In is indium, As is arsenic and Ge is germanium.;20. The apparatus of claim 1, wherein said carrier layer is formed as a single quantum well.;21. The apparatus of claim 1, wherein said carrier layer is designed as a double quantum well.;22. The apparatus of claim 1, wherein said carrier layer is designed as a superlattice comprising a plurality of quantum wells.;23. The apparatus of claim 1, wherein said carrier layer is formed as a heterojunction.;24. The apparatus of claim 1, wherein the charge carriers in said layer when moving carrier is given the opportunity to move in more than one dimension.;25. The apparatus of claim 1, wherein said incident radiation is directed to a solid structure of said at least one of a lens, the aperture of the waveguide and the waveguide.;26. The apparatus of claim 1, further comprising a device for cooling said solid-state structure.;27. The method of claim 2, wherein at least one of these defects is the boundary of said rectifier and a plasmon resonator.;28. The method of claim 2, wherein the rectifying a defect at a distance from said at least one plasmon resonator.;29. The method of claim 2, wherein said signal is a photovoltage value.;30. The method of claim 2, wherein said signal represents the value of the photocurrent.;31. The method of claim 2, wherein said signal is a value photocapacitance.;32. The method of claim 2, wherein said signal is a value fotoinduktivnosti.;33. The method of claim 2, wherein said signal represents the value of the photoresistor.;34. The method of claim 2, wherein said adjustable parameter is the density of carriers from said carrier layer.;35. The method of claim 2, wherein said adjustable parameter is a dielectric layer surrounding said carrier.;36. The method of claim 2, wherein said adjustable parameter is the intensity of the magnetic field from an independent source and the field penetrates into the layer of charge carriers.;37. The method of claim 2, wherein said adjustable parameter is the effective mass of the carriers from said carrier layer.;38. The method of claim 2, wherein said adjustable parameter is the size of the plasmon resonator.