METHOD FOR PRODUCING A metamaterial (OPTIONS)

摘要

1. A method of manufacturing a metamaterial consisting in that: - the plate is formed on the protective carrier layer - is formed on the protective layer sequentially alternating between an m + 1 levels resonant structures and dielectric layers, respectively m, where m - is an integer ≥1; - separated formed sequentially alternating between levels a resonance structures and dielectric layers with a protective layer on the plate-nositelya.2. A method according to claim 1, wherein the compartment formed by sequentially alternating between levels of a resonant structures and dielectric layers with a protective layer from the carrier plate is carried out in vode.3. A method according to claim 2, wherein a pre-oxidized silicon wafer carrier plate or carrier with hydrophilized glass poverhnostyu.4. A method according to claim 3, wherein the protective layer and the dielectric layers are formed from poliimida.5. A method according to claim 4, wherein the polyimide is formed from a solution piromilitovogo dianhydride and oxydianiline in a polar solvent, followed by applying and drying imidizatsiey.6. A method according to claims 1-5, wherein the thickness of the protective layer is at least 10 nm.7. metamaterial manufacturing method, comprising the steps that: - is formed on the n n protective layers plates-carriers, where n - an integer; - is formed on the protective layers successively alternating between an m + 1 levels resonant structures and m dielectric layers, respectively, where m - integer ≥1; - separated formed sequentially alternating between levels a resonance structures and dielectric layers with protective layers from the respective carrier plates n - are connected in series mounting method using Meto