METHOD OF OBTAINING HETEROSTRUCTURE TITANIUM OXIDE - SILICIDE OF TITANIUM HUMS TO SILICIC SUBSTRATE

摘要

1. A method for producing titanium oxide heterostructure - titanium silicide on a silicon substrate, comprising: heating a nanocrystalline titania film on the silicon substrate in an atmosphere of air, characterized in that the activation of the oxidation and silicidation reactions during the formation of heterostructure light izlucheniem.2 performed. A method according to claim 1 characterized in that the light source using pulsed Xenon lamp with a range of 0.2 to 1.2 mkm.3 radiation. A method according to claim 1 characterized in that the dose of radiation energy on the irradiated substrate is fed in the range of 220-240 J · smpaketami pulses 10c for 2.0-2.2 seconds.