A method for producing an electrical contact area on a semiconductor layer and the structural element with such a contact area

摘要

A method for producing a semiconductor layer sequence for a light-emitting diode having an n-conducting algainp-based layer and an electrical contact region of the n-conductive algainp-based layer, comprising the steps of:– Epitaxial growth of the semiconductor layer sequence on a growth substrate, beginning with the n-conducting algainp-based layer,– Application of the semiconductor layer sequence on a carrier substrate with the forward side facing away from the growth substrate of the semiconductor layer sequence, wherein a solder layer between the carrier substrate and of the epitaxial semiconductor layer sequence is formed,– subsequent exposure of the n-conducting algainp-based layer by at least partial removal of the growth substrate as well as of any intermediate layers between the growth substrate and of the epitaxially grown semiconductor layer sequence,– Application of a layer directly on the exposed n-type algainp-based layer, the at least one of the substances ti, cr, v and which has a thickness of between 1 nm and 20 nm, with the limits in each case are enclosed,– Application of electrical contact material which has at least one dopant au and, directly on the layer, the at least one of the substances ti, cr, v, wherein the dopant, at least one element selected from the group consisting of ge, si, sn and te contains,– Application of an electric rear side contact on the surface facing away from the epitaxial semiconductor layer sequence of the carrier substrate,– subsequent heat treatment of the n-conducting algainp-based layer, of the electrical contact material, of the layer, with which the electrical contact material is placed, and of the rear side contact at a temperature at which the solder layer essentially does not melt, wherein the electrical contact material and the back-surface contact at the same time be tempered.