interband cascade laser amplifier medium

摘要

interband cascade laser amplifier medium (m) with a number of along a transport direction (t) of charge carriers rows of cascades (c), each of which a electrons injector region (i), an amplifier region (v), and a electron collector area (k), wherein the amplifier region (v) a hole quantum well (1) consists of a first semiconductor material, and a electron quantum (2) is made of a second semiconductor material, wherein the electron collector area (k) is at least one hand, by a first barrier layer (3) separated collector quantum (4) consists of a third semiconductor material and said electrons injector region (i) at least one hand, by a second barrier layer (3) separated injector quanta film (5) consists of a fourth semiconductor material, and wherein along the cascade (c) with at least two for charge carriers coupled transport sub-bands (11 - 25) are formed such that the in the direction of transport (t) following sub-band (for example, 16) with respect to the in the direction of transport (t) preceding sub-band (for example, 15) in the electrical field of the mode in order to the energy of an optical phonon of the semiconductor materials involved is lowered, characterized in that the in the direction of transport (t) preceding sub-band (16) in the valence band (vb) of the electron collector region (k) and the in the direction of transport (t) following sub-band (17) in the conduction band (lb) of the electrons injector region (i) and / or the in the direction of transport (t) preceding sub-band (25) in the conduction band (lb) of the electrons injector region (i) and the in the direction of transport (t) following sub-band (11) in the conduction band (lb) of the electron quantum film (2) and / or the in the direction of transport (t) preceding sub-band (for example, 20), and in the direction of transport (t) following sub-band (for example, 21) in the conduction band (lb) of the electrons injector region (i) are formed.