Optoelectronic semiconductor component e.g. superluminescent LED laser light source for Pico projection application, has recess that is formed in main surface transversely to radiation direction side of bar-shaped structure

摘要

The semiconductor component has a radiation output surface which irradiates the electromagnetic radiation to semiconductor layer sequence (112). A main surface is oriented transversely to radiation output surface and provided with a ridge-shaped structure (102) along radiation direction. A recess (103) is formed in main surface transversely to radiation direction side of bar-shaped structure, such that respective distance of recess from radiation output surface and bridge-shaped structure is not more than 150 mu m and 300 mu m.