首页> 外国专利> Method for depositing layer on semiconductor wafer, involves depositing semiconductor wafer on carrier and performing relative movement between semiconductor wafer and carrier for depositing specific layer

Method for depositing layer on semiconductor wafer, involves depositing semiconductor wafer on carrier and performing relative movement between semiconductor wafer and carrier for depositing specific layer

机译:在半导体晶片上沉积层的方法,包括在载体上沉积半导体晶片并在半导体晶片和载体之间进行相对运动以沉积特定层

摘要

The methods involves depositing semiconductor wafer (5) on a carrier (3). The semiconductor wafer in edge region of rear side portion is set in contact with carrier. The specific layer is deposited on front surface by a vapor deposition. The relative movement between semiconductor wafer and carrier is performed for depositing the specific layer. An independent claim is included for a device for depositing layer on semiconductor wafer.
机译:该方法包括将半导体晶片(5)沉积在载体(3)上。后侧部分的边缘区域中的半导体晶片被设置成与载体接触。通过气相沉积将特定层沉积在前表面上。进行半导体晶片和载体之间的相对运动以沉积特定层。包括用于在半导体晶片上沉积层的设备的独立权利要求。

著录项

  • 公开/公告号DE102012215676A1

    专利类型

  • 公开/公告日2014-03-06

    原文格式PDF

  • 申请/专利权人 SILTRONIC AG;

    申请/专利号DE201210215676

  • 发明设计人 BRENNINGER GEORG;SCHAUER REINHARD;

    申请日2012-09-04

  • 分类号C23C16/458;H01L21/673;

  • 国家 DE

  • 入库时间 2022-08-21 15:37:40

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