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Therein by the plasma at atmospheric pressure of a hydrophobic coating has a low energy of the surface and has low thereof can be modulated
Therein by the plasma at atmospheric pressure of a hydrophobic coating has a low energy of the surface and has low thereof can be modulated
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机译:其中通过等离子体在大气压力下的疏水涂层具有低的表面能并且具有低的可以被调制
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摘要
The process comprises exposing a surface of a substrate to a dielectric barrier controlled discharge at an atmospheric pressure of a plasma-producing gas such as nitrogen in the presence of silicon precursor, and forming a coating on the substrate, where the coating is made of an alloy composition having silicon, carbon, oxygen, nitrogen and hydrogen (SiC xO yN 2:H) and presenting an adhesive strength smaller than the uncoated substrate on its external surface. The discharge is generated by electrodes supplied with a generator providing a power of 0.4-4 kW and a frequency of 20-50 kHz. The process comprises exposing a surface of a substrate to a dielectric barrier controlled discharge at an atmospheric pressure of a plasma-producing gas such as nitrogen in the presence of silicon precursor, and forming a coating on the substrate, where the coating is made of an alloy composition having a silicon, carbon, oxygen, nitrogen and hydrogen (SiC xO yN 2:H) and presenting an adhesive strength smaller than the uncoated substrate on its external surface. The discharge is generated by electrodes supplied with a generator providing a power of 0.4-4 kW and a frequency of 20-50 kHz. The precursor is any silicon and except organo-silicon fluorinated compounds. The substrate has a scrolling speed of 10-30 m/minutes. The coating has a thickness of 5-10 nm.
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机译:该方法包括在硅前驱物存在的情况下,在产生等离子体的气体(例如氮气)的大气压下,将衬底的表面暴露于介电势垒控制的放电中;在衬底上形成涂层,其中涂层由碳纳米管制成。具有硅,碳,氧,氮和氢的合金组合物(SiC xO yN 2:H),并且其外表面的粘合强度小于未涂覆的基材。放电是由配有发电机的电极产生的,该发电机提供0.4-4 kW的功率和20-50 kHz的频率。该方法包括在硅前驱物存在的情况下,在产生等离子体的气体(例如氮气)的大气压下,将衬底的表面暴露于介电势垒控制的放电中;在衬底上形成涂层,其中涂层由碳纳米管制成。具有硅,碳,氧,氮和氢(SiC xO yN 2:H)的合金组合物,其外表面的粘合强度小于未涂覆的基材。放电是由配有发电机的电极产生的,该发电机提供0.4-4 kW的功率和20-50 kHz的频率。除有机硅氟化化合物外,前体是任何硅。基材的滚动速度为10-30 m / min。涂层的厚度为5-10nm。
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