Method for realizing film in anisotropic magnetoresistance sensor for measurement or detection of e.g. magnetic anomaly, involves introducing non-zero residual mechanical stress in anisotropy direction parallel to surface of film

摘要

The method involves introducing a non-zero residual mechanical stress in an anisotropy direction parallel to a surface of a film (604) by treatment of an anisotropic magnetoresistance (AMR) material i.e. iron-nickel alloy, the film and/or two plastic supports (602-1, 602-2). The AMR material is deposited and mixed with another material on the supports. The latter material is subjected to a vacuum evaporation process. The film is subjected to a heat treatment process in the direction. The supports are subjected to durable plastic deformation in the direction. Independent claims are also included for the following: (1) a device for measurement or detection of a magnetic field (2) a method for measurement or detection of a magnetic field.