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DEVICE FOR GENERATING TARGETS BASED ON HYDROGEN AND / OR SOLID DEUTERIUM
DEVICE FOR GENERATING TARGETS BASED ON HYDROGEN AND / OR SOLID DEUTERIUM
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机译:基于氢和/或固体氘的目标生成装置
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摘要
The device comprises: a cell (2) provided with a first opening (3), a second opening (4) and an inlet opening (5) of hydrogen and/or deuterium or mixture of hydrogen and/or deuterium in a gas phase into the cell; a strip passing through the cell via the first and second openings, where the strip is configured to move in the cell from the first opening to the second opening; a first pump configured to place a volume of the cell, through which the strip passes, at a first pressure; and a first heat exchanger to maintain the strip in the volume of the cell at a first cryogenic temperature. The device comprises: a cell (2) provided with a first opening (3), a second opening (4) and an inlet opening (5) of hydrogen and/or deuterium or mixture of hydrogen and/or deuterium in a gas phase into the cell, where a flow rate of the gas inlet to the cell is adjusted via a control valve (5r) configured to control a flow rate provided by the inlet opening; a strip passing through the cell via the first and second openings, where the strip is configured to move in the cell from the first opening to the second opening; a first pump configured to place a volume of the cell, through which the strip passes, at a first pressure; a first heat exchanger configured to maintain the strip in the volume of the cell at a first cryogenic temperature; and a control circuit of the pump and of the control valve configured to adjust the first pressure to a higher value than the value of the saturated steam pressure of the hydrogen or deuterium or a mixture of hydrogen or deuterium at the first cryogenic temperature so as to respectively condense a solid film of hydrogen and/or deuterium or the mixture of hydrogen or deuterium on the strip in movement in the volume of the cell. The first heat exchanger is configured to be in contact with a first main surface of the strip. The first heat exchanger and the cell are configured to be in contact with a first main surface of the strip in the volume of the cell so as to achieve condensation of the hydrogen or deuterium or the mixture of hydrogen or deuterium on a second surface of the strip, where the second surface is opposite to the first main surface of the strip. The first heat exchanger is configured to be in contact with the main surface of the strip. The device further comprises: a spring mechanically connected to a fixed support and configured to fix the tension of the strip and a contact pressure of the strip on the first heat exchanger in the volume of the cell; a second pump configured to perform suction of the non-condensed gas flowing in the downstream duct; a heat shield that covers the cell and comprises two apertures facing the first and second openings, and is configured to let the strip moving through the cell via the first and second openings; and a tightly sealed cryostat inside which the cell and strip are located. The cell comprises: an upstream duct arranged between the first opening and the first heat exchanger, where the strip passes through the upstream duct; a second heat exchanger configured to maintain the strip in the upstream duct at a second temperature that is higher than the first temperature, where the second temperature is fixed so as to maintain the hydrogen or deuterium or the mixture of hydrogen or deuterium in the gas phase in the upstream duct; a downstream duct arranged between the second opening and the first heat exchanger, where the strip passes through the downstream duct; and a third heat exchanger configured to maintain the strip in the downstream duct at a third temperature that is higher than the first cryogenic temperature, where the third temperature is fixed to maintain the hydrogen or deuterium in gas phase in the downstream duct. The cell and the upstream duct are arranged for the strip to be devoid of contact with the second heat exchanger. The upstream duct is connected to the volume of the cell so as to form a first outlet opening of the non-condensed gas on the strip in the volume. The first pump performs suction of the non-condensed gas flowing in the upstream duct. The cell and the downstream duct are configured for the strip to be devoid of contact with the third heat exchanger. The downstream duct is connected to the volume of the cell so as to form a second outlet opening of the non-condensed gas on the strip in the volume. The cryostat comprises: a first window configured to let an incident laser beam bombarding the strip pass; a second window configured to let a proton or neutron beam transmitted by the strip pass; and an additional pump configured to create a vacuum in the sealed cryostat. An independent claim is included for a method for performing continuous deposition of a solid film of hydrogen or deuterium or of a mixture of hydrogen or deuterium.
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