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A push-pull RF power amplifier with capacitive gate-drain cross-coupling

机译:具有容性栅漏交叉耦合的推挽RF功率放大器

摘要

Gate-to-drain cross-coupling capacitors 50 and 52 are added to the common-source stage of a cascode RF amplifier in order to reduce the variation of the stages input capacitance as a function of the signal swing. AM-PM distortion at higher signal levels may be reduced by counteracting the phase lag (602, figure 6) in the MOS transistors M11 and M12 with a phase lead (600, figure 6) in the driver stage. The leading phase characteristic of the driver stage is obtained by controlling the variable capacitor 18 (such as a CDAC (capacitor digital-to-analogue converter)) so that the LC resonant frequency of the driver stage is slightly below the signal frequency. The bias currents 20 and 24 respectively increase and decrease with temperature so that the gain and the drain voltage of the devices M11 and M12 do not vary much over the working temperature range.
机译:栅漏交叉耦合电容器50和52被添加到共源共栅RF放大器的共源极级,以便减小级输入电容随信号摆幅的变化。可以通过在驱动器级中用相线(600,图6)抵消MOS晶体管M11和M12中的相位滞后(图6,602)来降低较高信号电平下的AM-PM失真。驱动器级的超前相位特性是通过控制可变电容器18(例如CDAC(电容器数模转换器))获得的,以使驱动器级的LC谐振频率略低于信号频率。偏置电流20和24分别随温度升高和降低,因此器件M11和M12的增益和漏极电压在工作温度范围内变化不大。

著录项

  • 公开/公告号GB2506498A

    专利类型

  • 公开/公告日2014-04-02

    原文格式PDF

  • 申请/专利权人 CAMBRIDGE SILICON RADIO LIMITED;

    申请/专利号GB20130013719

  • 发明设计人 KONSTANTINOS MANETAKIS;

    申请日2013-07-31

  • 分类号H03F3/26;H03F1/32;

  • 国家 GB

  • 入库时间 2022-08-21 15:35:51

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