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COMPOSITION SUITABLE TO INTERLAMINAR FILLER FOR LAMINATION TYPE SEMICONDUCTOR DEVICE, LAMINATION TYPE SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING LAMINATION TYPE SEMICONDUCTOR DEVICE
COMPOSITION SUITABLE TO INTERLAMINAR FILLER FOR LAMINATION TYPE SEMICONDUCTOR DEVICE, LAMINATION TYPE SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING LAMINATION TYPE SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide an interlayer filler composition for a lamination type semiconductor device capable of forming an interlayer filler layer having excellent thermal conductivity, even suitable to the lamination process of a semiconductor, also capable of secure joining between the semiconductor substrates and maintaining the stable joining in accordance with various environmental changes as well, a lamination type semiconductor device, and a production method therefor.SOLUTION: Provided is an interlayer filler composition for a lamination type semiconductor device containing: a resin whose melt viscosity at 120°C is 0.001 to 1 Pa s, a silica filler in which the volume average particle diameter is 0.1 to 10 μm; and an inorganic filler in which the volume average particle diameter is 0.1 to 10 μm, and also having the volume average particle diameter different from the average particle diameter of the silica filler.
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