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METHOD FOR PRODUCING METAL COMPLEX SOLUTION AND THIN FILM, METAL COMPLEX, THIN FILM, ELECTRONIC ELEMENT, THIN-FILM TRANSISTOR, DISPLAY DEVICE, IMAGE SENSOR AND X-RAY SENSOR
METHOD FOR PRODUCING METAL COMPLEX SOLUTION AND THIN FILM, METAL COMPLEX, THIN FILM, ELECTRONIC ELEMENT, THIN-FILM TRANSISTOR, DISPLAY DEVICE, IMAGE SENSOR AND X-RAY SENSOR
PROBLEM TO BE SOLVED: To provide a metal complex solution capable of easily preparing a thin film containing at least one of a metal oxide and a metal sulfide with a wide allowable humidity range during production, and to provide applications thereof.;SOLUTION: There are provided a metal complex solution containing a metal complex represented by the general formula (1) and applications thereof. (M represents In or Ga; L11- contains a carbon anion and represents an organic group bonding to M with a carbon anion; n represents 1 or 2; X11- is a ligand represented by the general formula (2), a nitrate ion, a nitrite ion, a halide ion or a hydroxide ion; L11- or X11- has a functional group exhibiting Lewis basicity.);COPYRIGHT: (C)2015,JPO&INPIT
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机译:解决的问题:提供一种能够在制备过程中容易地制备包含金属氧化物和金属硫化物中的至少一种且具有宽的允许湿度范围的薄膜的金属络合物溶液,并提供其应用。提供了一种含有通式(1)表示的金属配合物的金属配合物溶液及其应用。 (M表示In或Ga; L 11 Sub> - Sup>包含碳阴离子并表示与碳阴离子键合到M的有机基团; n表示1或2; X 11 Sub> - Sup>是由通式(2)表示的配体,硝酸根离子,亚硝酸根离子,卤化物离子或氢氧根离子; L 11 Sub > - Sup>或X 11 Sub> - Sup>具有具有Lewis碱性的官能团。);版权:(C)2015,JPO&INPIT
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