POWER SEMICONDUCTOR DEVICE, POWER SEMICONDUCTOR MODULE, AND MANUFACTURING METHOD OF POWER SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a small power semiconductor device which deals with high-temperature operation and achieves high reliability.SOLUTION: A power semiconductor device 1 includes: a ceramic base material 2i; a conductor layer 2a provided on an upper surface of the ceramic base material; power semiconductor elements 3a, 3b which are joined to an upper surface of the conductor layer; a main terminal 6a joined to a region which is located on upper surfaces of the power semiconductor elements and exclude an end edge part; a frame member 10 which is bonded to the upper surface of the conductor layer so as to enclose the semiconductor elements; and a sealing resin 12 which fills the inner side of the frame member and seals at least a joint region between the semiconductor elements and the main terminal. A low thermal expansion material 15 having a linear expansion coefficient smaller than the sealing resin is joined to a portion of the upper surface of the conductor surface which is located between the frame member and the semiconductor elements.