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INSULATING FILM DEFECT INSPECTION APPARATUS AND INSULATING FILM DEFECT INSPECTION METHOD

机译:绝缘膜缺陷检查装置和绝缘膜缺陷检查方法

摘要

PROBLEM TO BE SOLVED: To provide an inspection apparatus capable of detecting a defect of an insulating film by a fluctuation in voltage-current characteristics with respect to an initial voltage if a defect is present in the insulating film.;SOLUTION: An insulating film defect inspection apparatus is an apparatus for inspecting a defect generated in an insulating film of a semiconductor device which includes a schottky electrode 2 formed on a semiconductor substrate 1, an ohmic electrode 3 formed on the semiconductor substrate 1 and non-conductive to the schottky electrode 3, and an insulating film 4 formed on the schottky electrode 2, drops an electrolytic solution 5 onto the insulating film 4, applies a predetermined voltage between an electrode plate 6 immersed in the electrolytic solution 5 and the schottky electrode 2, measures changes in a voltage and a current flowing between the schottky electrode 2 and the ohmic electrode 3 from initial value characteristics, thereby inspecting a defect generated in the insulating film 4 of the semiconductor device 1.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的问题:提供一种检查装置,如果绝缘膜中存在缺陷,则该检查装置能够通过相对于初始电压的电压-电流特性的波动来检测绝缘膜的缺陷。检查装置是用于检查在半导体器件的绝缘膜中产生的缺陷的装置,该装置包括形成在半导体衬底1上的肖特基电极2,形成在半导体衬底1上并且与肖特基电极3不导电的欧姆电极3。然后,在肖特基电极2上形成绝缘膜4,将电解液5滴到绝缘膜4上,在浸入电解液5中的电极板6和肖特基电极2之间施加预定的电压,测量电压的变化根据初始值特性在肖特基电极2和欧姆电极3之间流动的电流ng在半导体器件1的绝缘膜4中产生的缺陷;版权所有:(C)2015,JPO&INPIT

著录项

  • 公开/公告号JP2015169509A

    专利类型

  • 公开/公告日2015-09-28

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORP;

    申请/专利号JP20140043728

  • 发明设计人 HIROI HISAMI;

    申请日2014-03-06

  • 分类号G01N27/26;H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-21 15:34:39

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