MICROWAVE HEAT TREATMENT DEVICE AND MICROWAVE HEAT TREATMENT METHOD

摘要

PROBLEM TO BE SOLVED: To perform a heat treatment on a substrate by using a microwave while achieving uniformity of an in-plane temperature distribution.SOLUTION: In a microwave heat treatment device 1, a cooling gas is injected from a shower head 60 and a gas introduction port 12b at flow rates independent from each other by control of a control part 8 during a period where a semiconductor wafer W is subjected to annealing. A cooling gas is injected from the shower head 60 by a face flow at a predetermined flow rate toward a principal surface of the wafer W. A cooling gas is injected from the gas introduction port 12b via a plurality of gas jet ports 63a of a shower plate 63 in a direction parallel with the principal surface of the wafer W by a side flow at a predetermined flow rate toward the wafer W.