首页> 外国专利> CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR HAVING ANTIPARALLEL FREE (APF) STRUCTURE WITH IMPROVED MAGNETIC STABILITY

CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR HAVING ANTIPARALLEL FREE (APF) STRUCTURE WITH IMPROVED MAGNETIC STABILITY

机译:具有改进的磁稳定性,具有反平行自由(APF)结构的电流垂直于平面(CPP)的磁阻(MR)传感器

摘要

PROBLEM TO BE SOLVED: To provide a current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having an antiparallel free (APF) structure with improved magnetic stability.;SOLUTION: The current-perpendicular-to-the-plane magnetoresistive sensor has an antiparallel free (APF) structure and soft side shields. In the current-perpendicular-to-the-plane magnetoresistive sensor, an upper free layer (FL2) of the APF structure is magnetically coupled antiparallel to a top shield and a top shield seed layer via a nonmagnetic antiparallel coupling (APC) layer. In one embodiment, the antiparallel coupling is through an antiferromagnetic-coupling (AFC) layer that provides a dominant antiferromagnetic indirect exchange coupling of FL2 to the top shield. In another embodiment, the antiparallel coupling is by an APC layer that decouples FL2 and the top shield and causes edge-induced magnetostatic coupling between FL2 and the seed layer to dominate. A degree of coupling is controlled by the composition and thickness of the nonmagnetic APC layer between FL2 and the seed layer, and by the thickness of the seed layer.;COPYRIGHT: (C)2015,JPO&INPIT
机译:要解决的问题:提供一种具有反平行自由(APF)结构并具有改善的磁稳定性的电流垂直于平面(CPP)的磁阻(MR)传感器;解决方案:电流垂直于该平面的平面磁阻传感器具有反平行自由(APF)结构和软侧屏蔽。在电流垂直于平面的磁阻传感器中,APF结构的上自由层(FL2)通过非磁性反平行耦合(APC)层反平行于顶部屏蔽层和顶部屏蔽种子层进行磁耦合。在一个实施例中,反平行耦合是通过反铁磁耦合(AFC)层进行的,该层提供了FL2到顶部屏蔽的主要反铁磁间接交换耦合。在另一个实施例中,反平行耦合是通过APC层进行的,该APC层使FL2和顶部屏蔽解耦,并且使得FL2和种子层之间的边缘感应静磁耦合起主导作用。耦合程度由FL2和种子层之间的非磁性APC层的组成和厚度以及种子层的厚度控制。;版权所有:(C)2015,JPO&INPIT

著录项

  • 公开/公告号JP2015082338A

    专利类型

  • 公开/公告日2015-04-27

    原文格式PDF

  • 申请/专利权人 HGST NETHERLANDS B V;

    申请/专利号JP20140216045

  • 申请日2014-10-23

  • 分类号G11B5/39;H01L43/08;H01L43/10;

  • 国家 JP

  • 入库时间 2022-08-21 15:32:54

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