Cu-DOPED P-TYPE ZnO-BASED SEMICONDUCTOR CRYSTAL LAYER, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a p-type ZnO-based semiconductor crystal layer obtained by doping a single Cu element to a ZnO-based semiconductor.;SOLUTION: A Cu-doped p-type ZnO-based semiconductor crystal layer is a ZnO-based semiconductor crystal layer obtained by doping Cu of 5% or more in terms of an atom ratio of a positive element, and has such a configuration that two Cu atoms are arranged adjacently to two group-II sites belonging to adjacent layers in a crystal via an O atom.;COPYRIGHT: (C)2015,JPO&INPIT