EPITAXIAL WAFER, LIGHT-RECEIVING ELEMENT, OPTICAL SENSOR DEVICE AND EPITAXIAL WAFER MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer and the like which can obtain good crystallinity so as to enable inhibition of a dark current.;SOLUTION: An epitaxial wafer according to the present invention is formed on a substrate of a III-V semiconductor and comprises a buffer layer which is located in contact with the substrate and contains phosphor (P) and a light-receiving layer located on the buffer layer. A thickness d of the buffer layer is 0.002 times or more of a thickness t of a laminate from a top face of the buffer layer to a top face of the epitaxial layer.;COPYRIGHT: (C)2015,JPO&INPIT