silicon-containing dopant composition, the same in order to improve the ion beam current and performance in the silicon ion implantation system and method of using the composition

摘要

for improving the beam current into a silicon-ion implantation, and dopant gas composition, its system and a method is provided. Silicon ion implantation process involves the step of utilizing the joint species and a second species of the first silicon base. Second species in the operating arc voltage of the ion source to be utilized during the production and injection of the active silicon ionic species, to have a larger ionization cross section than the ionization cross section of the first silicon-based species It is selected to. The active silicon ions, when compared to solely beam current generated from SiF4, characterized by it or increase to maintain the beam current levels without causing deterioration of the ion source, an improved beam current generate.