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Direct growth of backside via diamond for GaN HEMT devices
Direct growth of backside via diamond for GaN HEMT devices
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机译:GaN HEMT器件的背面通孔金刚石直接生长
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摘要
A GaN HEMT device having a silicon carbide substrate including a top surface and a bottom surface, wherein the substrate further includes vias formed in the bottom surface and the substrate. The device includes a plurality of epitaxial layers provided on the top surface of the substrate, a plurality of device layers provided on the epitaxial layers, and a diamond layer provided in the via.
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