Direct growth of backside via diamond for GaN HEMT devices

摘要

A GaN high electron mobility transistor (HEMT) device having a silicon carbide substrate including a top surface and a bottom surface, where the substrate further includes a via formed through the bottom surface and into the substrate. The device includes a plurality of epitaxial layers provided on the top surface of the substrate, a plurality of device layers provided on the epitaxial layers, and a diamond layer provided within the via.