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PHOTO CATHODE TYPE ELECTRON BEAM SOURCE, MANUFACTURING METHOD THEREOF, AND PHOTO CATHODE TYPE ELECTRON BEAM SOURCE SYSTEM

机译:光电阴极型电子束源,其制造方法以及光电阴极型电子束源系统

摘要

PROBLEM TO BE SOLVED: To provide "a photo cathode type electron beam source, a manufacturing method thereof, and a photo cathode type electron beam source system", capable of generating electron beams with dramatically high luminance as compared with conventional electron beam sources and allowing the use life thereof to extend dramatically.;SOLUTION: The problem mentioned above can be solved by using a photo cathode type electron beam source 11. The photo cathode type electron beam source 11 is formed on a tip surface 20a of a cathode tip 20 and includes a junction layer 21 formed on the tip surface 20a, a photoelectron emission layer 22 formed on one surface 21a of the junction layer 21, and a protection processing layer 23 formed on one surface 22a of the photoelectron emission layer 22. The junction layer 21 is made of a film of a material that does not react with the cathode tip 20 and does not react with a material comprising the photoelectron emission layer 22. The protection processing layer 23 is made of a passive film formed by the oxidation of a material that does not react with a material comprising the photoelectron emission layer 22.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的问题:提供一种“光阴极型电子束源,其制造方法和光阴极型电子束源系统”,与传统的电子束源相比,其能够产生具有显着高的亮度的电子束,并且允许解决方案:通过使用光阴极型电子束源11可以解决上述问题。光阴极型电子束源11形成在阴极尖端20的尖端表面20a上,并且包括形成在尖端表面20a上的结层21,形成在结层21的一个表面21a上的光电子发射层22以及形成在光电子发射层22的一个表面22a上的保护处理层23。由不与阴极尖端20反应并且不与包括光电子发射层22的材料反应的材料的膜制成。处理层23由钝化膜制成,该钝化膜通过不与构成光电子发射层22的材料发生反应的材料的氧化形成; COPYRIGHT:(C)2015,JPO&INPIT

著录项

  • 公开/公告号JP2014235816A

    专利类型

  • 公开/公告日2014-12-15

    原文格式PDF

  • 申请/专利权人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE;

    申请/专利号JP20130115335

  • 发明设计人 KIMOTO TAKAYOSHI;

    申请日2013-05-31

  • 分类号H01J37/073;H01J9/12;

  • 国家 JP

  • 入库时间 2022-08-21 15:31:19

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