The epitaxial film growth in retrograde well for the semiconductor device .

摘要

A method of manufacturing a semiconductor device . A substrate having a dielectric layer and the mask layer is provided . The substrate is patterned and developed . A plurality of trenches are generated inside the dielectric material by retrograde etching process . The followed by the plurality of trenches , the material is overfilled by heteroepitaxial growth with ART . The material comprises germanium , III-V group compound , or their two or more mixture . Subsequently plurality of trenches which are over- filling of the can is flattened . .