Halftone mask, a manufacturing method of a halftone mask blank and a halftone mask.

摘要

PROBLEM TO BE SOLVED: To provide a halftone mask capable of suppressing side etching of an etching stopper layer in washing processing using concentrated sulfuric acid.;SOLUTION: A halftone mask comprises a transparent part TA, a semitransparent part HA and a light shielding part PA. The light shielding part PA includes a substrate S, a semitransparent layer 11, a light shielding layer 13 provided on the semitransparent layer and made of Cr or a Cr compound, and an etching stopper layer 12 provided between the semitransparent layer 11 and the light shielding layer 13. The etching stopper layer 12 includes a first element and a second element. The first element is at least one kind of element selected from a group consisting of Mo and W, and has a composition ratio of 6.4 mol% or more and 38.2 mol% or less. The second element is at least one kind of element selected from a group consisting of Zr, Nb, Hf and Ta.;COPYRIGHT: (C)2012,JPO&INPIT