Organic solvent-based development or multiple development pattern forming method using electron beam or EUV light

摘要

Provided is a pattern-forming method including, in the following order: (1) a process of forming a film with an actinic ray-sensitive or radiation-sensitive resin composition comprising a resin which contains an acid-decomposable repeating unit and is capable of decreasing the solubility in an organic solvent by the action of an acid; (2) a process of exposing the film with an electron beam or an EUV ray; and (4) a process of developing the film with a developer containing an organic solvent, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises: (A) the resin containing an acid-decomposable repeating unit and being capable of decreasing the solubility in an organic solvent by the action of an acid; (B) a compound generating an acid upon irradiation with an actinic ray or radiation; and (C) a solvent; and resin (A) is (Ai) a resin having a lactone group and containing a repeating unit represented by the following formula (1), or (Aii) a resin containing a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or cyano group and a repeating unit represented by the following formula (1): wherein A represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, or a cyano group; R represents a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an aralkyl group, an alkoxy group, an alkylcarbonyloxy group, an alkylsulfonyloxy group, an alkyloxycarbonyl group or an aryloxycarbonyl group, and when two or more R's are present, each R may be the same as or different from every other R or when two or more R's are present, they may form a ring in combination with each other; a represents an integer of 1 to 3; and b represents an integer of 0 to (3-a).