RF bias capacitive electrostatic coupling to characterize the membrane in a plasma processing chamber (RFB-CCE) probe arrangement, a method associated therewith, and a program storage medium for storing code for performing the method

摘要

A method for characterizing a deposited film on a substrate in a process chamber during processing is provided. Method, in a state in which the measuring capacitor is set to a first capacitance value includes determining a voltage-current characteristic for a probe head. The method is also in a state in which the measuring capacitor is set to a larger capacitance value than the first capacitance value, comprising applying RF column to the probe head. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method includes still also an initial resistance value, the initial capacity value, and generating a pseudo-voltage time curve by utilizing the voltage-current characteristic. Method may still further include determining a measured voltage-time curve representing the potential drop through the deposited film between one RF train. Method, moreover, includes comparing the two curves. If these differences is below a predetermined threshold, utilizing the initial resistance value and the initial capacitance values ​​to characterize the deposited film. .FIELD 1