Quality evaluation method of dielectric breakdown lifetime simulation method and the surface of the silicon wafer

摘要

PROBLEM TO BE SOLVED: To provide a breakdown life simulation method and a quality evaluation method for a silicon wafer surface, that can correctly analyze a defect kind, a defect size, and the like based on comparison with actual measurement data by obtaining a correct breakdown life of an insulation film through accurate simulation that is suitable for the breakdown life of an actual device.;SOLUTION: In a breakdown life simulation method, a defect is incorporated in advance at an interface between a silicon wafer and an insulation film and at an interface between the insulation film and a metal electrode, and/or in the insulation film in a structure that is to be subjected to simulation. In the structure including the defect, the breakdown life of the insulation film is obtained by generating a random number of defects in the insulation film.;COPYRIGHT: (C)2012,JPO&INPIT