PRECISION HALF CELL FOR SUB-FEMTO UNIT CAP AND CAPACITIVE DAC ARCHITECTURE IN SAR ADC

摘要

A capacitive device is disclosed, including a first conductor formed on a lower metal layer and coupled to a first terminal. A second conductor is formed on an upper metal layer and a plurality of wires is partitioned into groups, each group including one wire from a respective metal layer. First and second wires of each group are coupled to a second terminal. A third wire of each group, adjacent to the first wire, is coupled to the first conductor. A fourth wire of each group, adjacent to the second wire, is coupled to the second conductor. Fifth wires of a first subset of the groups are coupled to the second conductor and fifth wires of a second subset of the groups are coupled to the first conductor. The fifth wire of each group is adjacent to the first wire and the second wire.