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ONE-TIME PROGRAMMABLE MEMORY AND SYSTEM-ON CHIP INCLUDING ONE-TIME PROGRAMMABLE MEMORY

机译:一次性可编程存储器和系统芯片,包括一次性可编程存储器

摘要

A one-time programmable (OTP) memory includes an OTP cell array including a plurality of OTP cells that each include a programming transistor configured to change irreversibly when programmed; a temperature compensation reference voltage generating unit configured to sense a temperature of the OTP cell memory and generate a reference voltage such that as the sensed temperature changes, the reference voltage generated by the temperature compensation reference voltage generating unit changes in a manner that is inversely proportional the change in the sensed temperature; and a temperature compensation operating voltage generating unit configured to receive the reference voltage to generate an operating voltage that is proportional to the reference voltage and is applied to the OTP cell array.
机译:一次性可编程(OTP)存储器包括OTP单元阵列,该OTP单元阵列包括多个OTP单元,每个OTP单元都包括配置为在编程时不可逆地变化的编程晶体管。温度补偿参考电压产生单元,其被配置为感测OTP单元存储器的温度并产生参考电压,使得随着感测到的温度变化,温度补偿参考电压产生单元产生的参考电压以反比例的方式改变感测到的温度变化;温度补偿工作电压产生单元,用于接收参考电压,以产生与参考电压成比例的工作电压,并施加到OTP单元阵列。

著录项

  • 公开/公告号US2015138870A1

    专利类型

  • 公开/公告日2015-05-21

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US201414539605

  • 发明设计人 JONG-DOO JOO;

    申请日2014-11-12

  • 分类号G11C17/08;

  • 国家 US

  • 入库时间 2022-08-21 15:25:46

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