首页> 外国专利> CALCULATING CIRCUIT-LEVEL LEAKAGE USING THREE DIMENSIONAL TECHNOLOGY COMPUTER AIDED DESIGN AND A REDUCED NUMBER OF TRANSISTORS

CALCULATING CIRCUIT-LEVEL LEAKAGE USING THREE DIMENSIONAL TECHNOLOGY COMPUTER AIDED DESIGN AND A REDUCED NUMBER OF TRANSISTORS

机译:利用三维技术计算机辅助设计和减少晶体管数量计算电路泄漏

摘要

A method for calculating leakage of a circuit including a plurality of transistors includes simulating a three-dimensional model of the circuit, wherein the simulating accounts for a subset of the plurality of the transistors that includes less than all of the plurality of transistors, and calculating the leakage in accordance with the three-dimensional model.
机译:一种用于计算包括多个晶体管的电路的泄漏的方法,包括模拟电路的三维模型,其中该模拟考虑了包括少于全部多个晶体管的多个晶体管的子集,并计算根据三维模型进行泄漏。

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