首页> 外国专利> DEEP INTRONIC TARGET FOR SPLICING CORRECTION ON SPINAL MUSCULAR ATROPHY GENE

DEEP INTRONIC TARGET FOR SPLICING CORRECTION ON SPINAL MUSCULAR ATROPHY GENE

机译:脊髓肌萎缩基因的拼接校正的深层内向靶标

摘要

The present invention is directed to methods and compositions for blocking the effect of the intronic inhibitory splicing region of intron 7 of the SMN2 gene. The compositions and methods of the instant invention include short oligonucleotide reagents (e.g., oligoribonucleotides) that effectively target sites in the SMN2 pre-mRNA, thereby modulating the splicing of SMN2 pre-mRNA to include exon 7 in the processed transcript. The target regions include a unique RNA structure and a 6-nucleotide long sequence that is essential for initiating a long distance steric inhibitory interaction. The identified region provides a novel target deep within SMN2 intron 7. Intronic targets are highly desirable as annealing of an ASO to an intron does not interfere with translation and transport of mRNA. The invention also provides opportunity to employ a short antisense oligonucleotide or a small compound against the unique RNA structure responsible of SMN2 exon 7 skipping in SMA.
机译:本发明涉及用于阻断SMN2基因的内含子7的内含子抑制性剪接区的作用的方法和组合物。本发明的组合物和方法包括短的寡核苷酸试剂(例如寡核糖核苷酸),其有效地靶向SMN2 pre-mRNA中的位点,从而调节SMN2 pre-mRNA的剪接以在加工的转录物中包括外显子7。靶区域包括独特的RNA结构和6-核苷酸长序列,这对于启动长距离空间抑制相互作用至关重要。所鉴定的区域提供了在SMN2内含子7内的新靶标。非常需要内含子靶标,因为ASO退火至内含子不会干扰mRNA的翻译和运输。本发明还提供了使用短的反义寡核苷酸或小的化合物对抗SMA中SMN2外显子7跳跃的独特RNA结构的机会。

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