METHODS OF SELECTIVELY GROWING SOURCE/DRAIN REGIONS OF FIN FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN FIELD EFFECT TRANSISTOR

摘要

The inventive concepts provide methods of manufacturing a semiconductor device. The method includes patterning a substrate to form an active pattern, forming a gate pattern intersecting the active pattern, forming a gate spacer on a sidewall of the gate pattern, forming a growth-inhibiting layer covering an upper region of the gate pattern, and forming source/drain electrodes at opposite first and second sides of the gate pattern.