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METHOD FOR IN-SITU CHAMBER CLEAN USING CARBON MONOXIDE (CO) GAS UTLIZED IN AN ETCH PROCESSING CHAMBER
METHOD FOR IN-SITU CHAMBER CLEAN USING CARBON MONOXIDE (CO) GAS UTLIZED IN AN ETCH PROCESSING CHAMBER
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机译:在蚀刻处理室中使用一氧化碳(CO)气体进行原位腔清洁的方法
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摘要
Embodiments of the disclosure generally relate to methods of removing etch by-products from the plasma processing chamber using carbon monoxide or carbon dioxide. In one embodiment, a method for dry cleaning a processing chamber includes exposing a chamber component disposed within the processing chamber in absence of a substrate disposed therein to a first cleaning gas mixture comprising carbon monoxide or carbon dioxide, wherein a portion of the chamber component has a film layer or residues deposited thereon, and the film layer or residues comprises a refractory metal and/or a metal silicide.
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