首页> 外国专利> SYSTEM AND METHOD FOR REDUCING DARK CURRENT DRIFT IN A PHOTODIODE BASED ELECTRON DETECTOR

SYSTEM AND METHOD FOR REDUCING DARK CURRENT DRIFT IN A PHOTODIODE BASED ELECTRON DETECTOR

机译:减少基于光电二极管的光电探测器中暗电流漂移的系统和方法

摘要

A sensing element that may include (a) a PIN diode that may include an anode that is coupled to an anode contact; a cathode that is coupled to a cathode contact; a semiconductor portion that has a sensing region; and an insulator that is positioned between the cathode contact and the anode contact; and (b) a shielding element. The insulator, the cathode contact and the anode contact are positioned between the shielding element and the semiconductor portion. The shielding element is shaped and positioned to facilitate radiation to impinge onto the sensing region of the semiconductor portion while at least partially shielding the insulator from electrons that are emitted from the sensing region.
机译:感测元件可以包括:(a)PIN二极管,其可以包括耦合至阳极触点的阳极;以及阴极,其耦合至阴极触点;具有感测区域的半导体部分;绝缘体位于阴极触点和阳极触点之间。 (b)屏蔽元件。绝缘体,阴极触点和阳极触点位于屏蔽元件和半导体部分之间。屏蔽元件的形状和位置被设置成有助于辐射撞击到半导体部分的感测区域上,同时至少部分地使绝缘体免受从感测区域发射的电子的影响。

著录项

  • 公开/公告号US2015145090A1

    专利类型

  • 公开/公告日2015-05-28

    原文格式PDF

  • 申请/专利权人 APPLIED MATERIALS ISRAEL LTD.;

    申请/专利号US201314089571

  • 发明设计人 PAVEL MARGULIS;

    申请日2013-11-25

  • 分类号H01L31/02;H01L31/105;

  • 国家 US

  • 入库时间 2022-08-21 15:24:34

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