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METHOD FOR FAST AND REPEATABLE PLASMA IGNITION AND TUNING IN PLASMA CHAMBERS

机译:等离子体腔中快速可重复等离子体点火和调整的方法

摘要

Embodiments of the present invention include methods and apparatus for plasma processing in a process chamber using an RF power supply coupled to the process chamber via a matching network. In some embodiments, the method includes providing RF power to the process chamber by the RF power supply at a first frequency while the matching network is in a hold mode, adjusting the first frequency, using the RF power supply, to a second frequency during a first time period to ignite the plasma, adjusting the second frequency, using the RF power supply, to a known third frequency during a second time period while maintaining the plasma, and changing an operational mode of the matching network to an automatic tuning mode to reduce a reflected power of the RF power provided by the RF power supply.
机译:本发明的实施例包括用于使用经由匹配网络耦合到处理室的RF电源在处理室中进行等离子体处理的方法和设备。在一些实施例中,该方法包括:当匹配网络处于保持模式时,通过RF电源以第一频率向处理室提供RF功率,在射频耦合期间,使用RF电源将第一频率调整为第二频率。点燃等离子体的第一时间段,在保持等离子体的第二时间段内,使用RF电源将第二频率调整为已知的第三频率,并将匹配网络的操作模式更改为自动调谐模式以降低射频电源提供的射频功率的反射功率。

著录项

  • 公开/公告号US2014367043A1

    专利类型

  • 公开/公告日2014-12-18

    原文格式PDF

  • 申请/专利权人 APPLIED MATERIALS INC.;

    申请/专利号US201414287480

  • 发明设计人 WAHEB BISHARA;SAMER BANNA;

    申请日2014-05-27

  • 分类号H01J37/32;

  • 国家 US

  • 入库时间 2022-08-21 15:24:20

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