ELECTRIC FIELD ENHANCEMENT ELEMENT, RAMAN SPECTROSCOPIC METHOD, RAMAN SPECTROSCOPIC DEVICE, AND ELECTRONIC APPARATUS

摘要

An electric field enhancement element includes a metal fine structure layer configured including a metal fine structure smaller in size than a wavelength of incident light, a mirror layer adapted to reflect light having passed through the metal fine structure layer, a magnetooptic material layer disposed between the metal fine structure layer and the mirror layer, and adapted to cause at least one of a Faraday effect and a Cotton-Mouton effect, and a magnetic field generation device adapted to apply a magnetic field to the magnetooptic material layer.