首页> 外国专利> Reducing color conflicts in triple patterning lithography

Reducing color conflicts in triple patterning lithography

机译:减少三重图案化光刻中的颜色冲突

摘要

Methods of the present disclosure can include: using a computing device to perform actions including: applying a design rule check (DRC) on a proposed integrated circuit (IC) layout, wherein the DRC applies a set of restrictive design rules (RDRs) in response to the proposed IC layout being a contact area (CA) layout; computing a conflict graph for the proposed IC layout in response to one of the IC layout being a metal layer layout and the set of RDRs being satisfied; determining whether the IC layout is one of non-colorable, indeterminate, partially colorable, and fully colorable; and partially coloring the IC layout and identifying non-colorable nodes in response to the IC layout being indeterminate or partially colorable.
机译:本公开的方法可以包括:使用计算设备来执行动作,包括:在提议的集成电路(IC)布局上应用设计规则检查(DRC),其中DRC作为响应应用一组限制性设计规则(RDR)。提议的IC布局为接触区(CA)布局;响应于所述IC布局中的一个是金属层布局并且满足所述一组RDR,计算用于所提议的IC布局的冲突图;确定集成电路布图是否是不可着色,不确定,部分着色和完全着色之一;响应于IC布局是不确定的或部分可着色的,对IC布局进行部分着色并识别不可着色的节点。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号