首页> 外国专利> GATE DRIVING CIRCUIT, AND SWITCHING APPARATUS AND POWER SUPPLY APPARATUS HAVING THE SAME

GATE DRIVING CIRCUIT, AND SWITCHING APPARATUS AND POWER SUPPLY APPARATUS HAVING THE SAME

机译:栅极驱动电路,以及具有相同功能的开关设备和电源设备

摘要

A gate driving circuit may include: a bias unit receiving an input signal having preset high and low signal levels, including a first N-MOSFET turned on in the case in which the input signal has the high level and a first P-MOSFET turned on in the case in which the input signal has the low level, and supplying bias powers by the turning-on of the first N-MOSFET and the first P-MOSFET; and an amplifying unit including a second N-MOSFET turned on by receiving the bias power supplied from the first N-MOSFET in the case in which the input signal has the high level and a second P-MOSFET turned on by receiving the bias power supplied from the first P-MOSFET turned on in the case in which the input signal has the low level and providing a gate signal depending on the turning-on of the second N-MOSFET and the second P-MOSFET.
机译:栅极驱动电路可以包括:偏置单元,其接收具有预设的高和低电平信号电平的输入信号,包括在输入信号具有高电平的情况下导通的第一N-MOSFET和导通的第一P-MOSFET在输入信号为低电平的情况下,通过第一N-MOSFET和第一P-MOSFET的导通来提供偏置功率。以及放大单元,其包括:在输入信号具有高电平的情况下,通过接收从第一N-MOSFET提供的偏置功率而导通的第二N-MOSFET;以及通过接收所提供的偏置功率而导通的第二P-MOSFET在输入信号为低电平的情况下,第一P-MOSFET从第一P-MOSFET导通,并根据第二N-MOSFET和第二P-MOSFET的导通提供栅极信号。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号